UV Enhanced NO2 Sensing Properties of Pt Functionalized Ga2O3 Nanorods
UV Enhanced NO2 Sensing Properties of Pt Functionalized Ga2O3 Nanorods
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DOI：
10.5012/bkcs.2013.34.6.1632
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发表时间：
2013-06-20
影响因子：
1.7
通讯作者：
Lee, Chongmu
中科院分区：
文献类型：
--
作者：
An, Soyeon;Park, Sunghoon;Lee, Chongmu
采用热蒸发技术合成了Ga 2 O3一维纳米结构。在室温和紫外光照射下，研究了Pt/NO2功能化Ga（2）O（3）纳米结构的形貌、晶体结构和传感特性。一维纳米结构的直径范围从几十到几百纳米，长度范围高达几百微米。Pt纳米粒子的直径为几十纳米，分布在Ga（2）O（3）纳米棒周围。由多个网络化Ga（2）O（3）纳米棒制成的纳米棒气敏元件的响应在NO2浓度从1到5 ppm范围内通过Pt功能化提高了3-4倍。Pt功能化的Ga 2 O3纳米棒气体传感器在室温下的紫外（UV）光照射下表现出显着增强的响应。此外，还讨论了Pt功能化和紫外光辐照增强Ga（2）O（3）纳米棒气敏性能的机理。
Ga2O3 one-dimensional (1D) nanostructures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Ga(2)O(3)nanostructures functionalized with Pt to NO2 gas at room temperature under UV irradiation were examined. The diameters of the 1D nanostructures ranged from a few tens to a few hundreds of nanometers and the lengths ranged up to a few hundreds of micrometers. Pt nanoparticles with diameters of a few tens of nanometers were distributed around a Ga(2)O(3)nanorod. The responses of the nanorods gas sensors fabricated from multiple networked Ga(2)O(3)nanorods were improved 3-4 fold at NO2 concentrations ranging from 1 to 5 ppm by Pt functionalization. The Pt-functionalized Ga2O3 nanorod gas sensors showed a remarkably enhanced response at room temperature under ultraviolet (UV) light illumination. In addition, the mechanisms via which the gas sensing properties of Ga(2)O(3)nanorods are enhanced by Pt functionalization and UV irradiation are discussed.