Electrical behavior and oxygen vacancies in BiFeO3/[(Bi1/2Na1/2)0.94Ba0.06]TiO3 thin film
Electrical behavior and oxygen vacancies in BiFeO3/[(Bi1/2Na1/2)0.94Ba0.06]TiO3 thin film
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DOI：
10.1063/1.3259655
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发表时间：
2009-11
影响因子：
4
通讯作者：
Jiagang Wu;Guangqing Kang;John Wang
中科院分区：
文献类型：
--
作者：
Jiagang Wu;Guangqing Kang;John Wang
采用溶胶-凝胶和射频溅射相结合的方法，在Pt/TiO 2/SiO2/Si衬底上制备了由[（Bi 1/2Na 1/2）0.94Ba 0.06] TiO 3（BNBT）和BiFeO 3（BFO）纳米层组成的双层多铁性薄膜。具有（110）取向和致密织构的双层BFO/BNBT薄膜表现出优异的铁电和介电行为（例如，2 Pr = 79.7 μC/cm ~ 2，2 Ec = 772.6 kV/cm，Er = 178，tan δ = 0.03），同时具有高达1×1010次开关循环的长疲劳寿命，同时良好地保持了所需的磁性能。阻抗谱研究表明，BFO/BNBT双层薄膜的导电过程中存在氧空位的二次电离。
Multiferroic bilayered thin films consisting of [(Bi1/2Na1/2)0.94Ba0.06]TiO3 (BNBT) and BiFeO3 (BFO) nanolayers were successfully grown on Pt/TiO2/SiO2/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2Pr∼79.7 μC/cm2, 2Ec∼772.6 kV/cm, er∼178, and tan δ∼0.03), together with a long fatigue endurance up to 1×1010 switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film.