Highly ordered graphene for two dimensional electronics
Highly ordered graphene for two dimensional electronics
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DOI：
10.1063/1.2358299
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发表时间：
2006-10-02
影响因子：
4
通讯作者：
Berger, C.
中科院分区：
文献类型：
--
作者：
Hass, J.;Feng, R.;Berger, C.
随着对石墨烯基电子器件的兴趣不断扩大，生长高质量的石墨烯薄膜至关重要。在真空中从4 H-SiC（0001）（Si封端的）表面升华Si是在半导体上生产外延石墨烯片的经证明的方法。在这封信中，作者表明，从SiC（000（1）棒）（C-终止）表面生长的石墨烯比以前在SiC（0001）上生长的石墨烯质量更高。在C面上生长的石墨烯可以具有比在Si面上生长的结构域尺寸大三倍以上的结构域尺寸，同时将来自升华的SiC衬底无序减少一个数量级。(c)2006年，美国物理学会。
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) (Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this letter the authors show that graphene grown from the SiC(000 (1) over bar) (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C face can have structural domain sizes more than three times larger than those grown on the Si face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude. (c) 2006 American Institute of Physics.