Photoluminescence study of heavy doping effects in Te-doped GaSb
Photoluminescence study of heavy doping effects in Te-doped GaSb
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DOI：
10.1063/1.365297
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发表时间：
1997-06
影响因子：
3.2
通讯作者：
A. Bignazzi;A. Bosacchi;R. Magnanini
中科院分区：
文献类型：
--
作者：
A. Bignazzi;A. Bosacchi;R. Magnanini
研究了重掺Te的GaSb在不同自由载流子浓度下的光致发光。一个仔细的线形分析占主导地位的自由到绑定的过渡已进行使用非抛物线带，并考虑到带拖尾通过凯恩模型。费米能级和带边位置已被确定的PL带的拟合。我们的结果表明，能隙值显着低于轻掺杂和未掺杂的材料。考虑到多体相互作用（交换）和随机杂质分布，可以很好地理解这种带隙变窄，这会导致带向彼此和尾态分别刚性移位到禁带中。在不同的温度和激发功率密度下进行了测量，以证明受主波动和少数载流子分布在确定光发射能量中的作用。简单的关系连接带隙n.
The photoluminescence (PL) of heavily Te-doped GaSb has been investigated for different free carrier concentrations. A careful line shape analysis of the dominant free-to-bound transition has been performed using nonparabolic bands and taking into account the band tailing through the Kane model. The Fermi level and the band edge position have been determined from the fit of the PL band. Our results show that the energy gap value is significantly lower than in lightly doped and undoped material. This band-gap narrowing can be well understood taking into account both manybody interaction (exchange) and the random impurity distribution, that induces a rigid shift of the bands toward each other and tail states into the forbidden gap, respectively. Measurements have been performed at different temperatures and excitation power densities to evidence the role of the acceptor fluctuation and of the minority carrier distribution in determining the optical emission energy. Simple relations connecting the band-gap n...