Development of Plasma Assisted Reactive Process for Uniform Formation of High Mobility Oxide Semiconductor Thin Film Transistors over Large Areas
Development of Plasma Assisted Reactive Process for Uniform Formation of High Mobility Oxide Semiconductor Thin Film Transistors over Large Areas
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开发用于大面积均匀形成高迁移率氧化物半导体薄膜晶体管的等离子体辅助反应工艺
DOI：
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发表时间：
2023
期刊：
影响因子：
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通讯作者：
Yuichi Setsuhara
中科院分区：
文献类型：
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作者：
Kosuke Takenaka;Tomoki Yoshitani;Susumu Toko;Giichiro Uchida;Akinori Ebe;Yuichi Setsuhara
