Flash Watermark: An Anticounterfeiting Technique for NAND Flash Memories
Flash Watermark: An Anticounterfeiting Technique for NAND Flash Memories
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闪存水印：一种 NAND 闪存防伪技术
DOI：
10.1109/ted.2020.3015451
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发表时间：
2020
影响因子：
3.1
通讯作者：
B. Ray
中科院分区：
文献类型：
--
作者：
S. Sakib;A. Milenković;B. Ray
这篇文章演示了一种新的技术，水印的商业现成的NAND闪存芯片。该技术使用重复的编程-擦除应力来选择性地控制闪存单元的物理属性，从而以不可逆的方式将水印信息压印到闪存介质中。它是伴随着一个水印阅读方法，使用程序干扰效应提取的物理特性的闪存单元包含水印。实验评估，使用几个商业闪存芯片，表明所提出的技术提供了强大的水印，不能轻易改变使用故障注入攻击，如局部加热。我们证明了一个低的比特错误率（<1%），在检索的水印数据和适度的高速水印印记（<inline-formula><tex-math notation="LaTeX">$\约1$</tex-math></inline-formula>kb/s）和水印检索（<inline-formula><tex-math notation="LaTeX">$\约32$</tex-math></inline-formula>kb/s）。所提出的技术不需要任何硬件修改，使其成为广泛的基于NAND闪存的存储产品的具有成本效益的防伪解决方案。
This article demonstrates a novel technique for watermarking commercial off-the-shelf NAND flash memory chips. The technique uses repeated program-erase stressing to selectively control the physical properties of the flash cells and hence imprint watermark information into the flash media in an irreversible manner. It is accompanied by a watermark reading method that uses program disturb effects to extract the physical properties of flash memory cells containing watermark. The experimental evaluation, using several commercial flash memory chips, shows that the proposed technique offers robust watermarks that cannot be easily altered using fault injection attacks such as localized heating. We demonstrate a low bit error rate (<1%) in the retrieved watermark data and moderately high-speed watermark imprinting (<inline-formula> <tex-math notation="LaTeX">$\approx 1$ </tex-math></inline-formula> kb/s) and watermark retrieval (<inline-formula> <tex-math notation="LaTeX">$\approx 32$ </tex-math></inline-formula> kb/s). The proposed technique does not require any hardware modifications, making it a cost-effective anticounterfeit solution for a wide range of NAND-flash-based storage products.