Influence of Substrates on the Long-Range Order of Photoelectrodeposited Se-Te Nanostructures.
Influence of Substrates on the Long-Range Order of Photoelectrodeposited Se-Te Nanostructures.
复制标题
基底对光电沉积 Se-Te 纳米结构长程有序的影响。
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
N. Lewis
中科院分区：
文献类型：
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作者：
Ethan Simonoff;Michael F. Lichterman;Kimberly M. Papadantonakis;N. Lewis
用晶体（111）取向Si衬底掺杂p型或n型掺杂剂，研究了室温下均匀强度、极化、非相干、近红外光照下电化学生长的各向异性光性Se-Te薄膜的长程。对扫描电子显微镜获得的大面积图像进行傅里叶变换（FT）分析，并利用FT光谱中的峰形来确定沉积Se-Te薄膜的图案保真度。在名义上相同的光照条件下，p+-Si（111）上生长的光致性薄膜比n+-Si（111）上生长的光致性薄膜表现出更高的各向异性程度和更明确的图案周期。当通过调节沉积参数和光照条件来控制沉积速率和电流密度时，p+-Si和n+-Si上的Se-Te光敏镀层形貌和图案保真度也存在类似的差异。Si衬底掺杂对致光性Se-Te镀层图案保真度的影响归因于Se-Te和p+-Si与n+-Si之间不同的界面结能量产生的电效应，这种电效应影响了Se-Te/Si界面的致光性生长过程中的动态行为。
The long-range order of anisotropic phototropic Se-Te films grown electrochemically at room temperature under uniform-intensity, polarized, incoherent, near-IR illumination has been investigated using crystalline (111)-oriented Si substrates doped degenerately with either p- or n-type dopants. Fourier-transform (FT) analysis was performed on large-area images obtained with a scanning electron microscope, and peak shapes in the FT spectra were used to determine the pattern fidelity in the deposited Se-Te films. Under nominally identical illumination conditions, phototropic films grown on p+-Si(111) exhibited a higher degree of anisotropy and a more well-defined pattern period than phototropic films grown on n+-Si(111). Similar differences in the phototropic Se-Te deposit morphology and pattern fidelity on p+-Si versus n+-Si were observed when the deposition rate and current densities were controlled for by adjusting the deposition parameters and illumination conditions. The doping-related effects of the Si substrate on the pattern fidelity of the phototropic Se-Te deposits are ascribable to an electrical effect produced by the different interfacial junction energetics between Se-Te and p+-Si versus n+-Si that influences the dynamic behavior during phototropic growth at the Se-Te/Si interface.