Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices
Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices
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DOI：
10.1063/1.118087
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发表时间：
1996-07-01
影响因子：
4
通讯作者：
Pak, K
中科院分区：
文献类型：
--
作者：
Samonji, K;Yonezu, H;Pak, K
为了抑制穿透位错的产生，我们在InP/Si异质外延中加入了多应变短周期超晶格（SSPS）和GaP缓冲层。结果发现，与InP/GaP/Si结构相比，在包括（InAs）（m）（GaAs）（n）SSPS和（GaAs）（i）（GaP）（j）SSPS的InP/SSPS/GaAs/SSPS/GaP/Si结构中的穿透位错密度显著降低。在InP/SSPS/GaAs/SSPS/GaP/Si异质界面处观察到沿着[011]方向的失配位错。因此，晶格失配应变逐步适应的失配位错在异质界面的产生。从这些结果中，它被澄清，多SSPS是有效的，以减少在异质外延与大的晶格失配的螺纹位错的密度。(C)1996年美国物理学会。
We applied multistrained short-period superlattices (SSPSs) and GaP-buffer layers to the InP-on-Si heteroepitaxy, in order to suppress the generation of threading dislocations. As a result, it was found that the density of threading dislocations in an InP/SSPSs/GaAs/SSPSs/GaP/Si structure including (InAs)(m)(GaAs)(n) SSPSs and (GaAs)(i)(GaP)(j) SSPSs was remarkably reduced, compared with that in the InP/GaP/Si structure. Misfit dislocations lying along the [011] directions were observed at heterointerfaces in the InP/SSPSs/GaAs/SSPSs/GaP/Si structure. Therefore, the lattice mismatch strain was stepwise accommodated by the generation of misfit dislocations at the heterointerfaces. From these results, it was clarified that multi-SSPSs are effective for reducing the density of threading dislocations in heteroepitaxy with a large lattice mismatch. (C) 1996 American Institute of Physics.