Composition and structure of ion‐bombardment‐induced growth cones on InP
Composition and structure of ion‐bombardment‐induced growth cones on InP
复制标题
InP 离子轰击诱导生长锥的组成和结构
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
W. Gries
中科院分区：
文献类型：
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作者：
J. Malherbe;H. Lakner;W. Gries
用扫描透射电子显微镜研究了低能（几keV）离子轰击对InP表面形貌的1，2效应。会聚束电子衍射图案的表面生长的"锥"引起的氩离子轰击（100）InP之间的7和10 keV证明锥由结晶InP（而不是金属铟，有时已声称）。调查表明，照射的表面区域是不呈现完全非晶，但它从结晶/非晶界面的柱状生长模式，往往终止于生长锥突出的表面。弱束的调查表明，绝大多数的锥体有基板的取向。这些现象在7 × 1015至2 × 1017 cm − 2的所有剂量密度下都能观察到。
The previously reported1,2 effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth ‘cones’ induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 × 1015 to 2 × 1017 cm−2.