Ballistic Bit Addressing in a Magnetic Memory Cell Array
Ballistic Bit Addressing in a Magnetic Memory Cell Array
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磁存储单元阵列中的弹道位寻址
DOI：
10.1063/1.1999860
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
H. Schumacher
中科院分区：
文献类型：
--
作者：
H. Schumacher
提出了一种用于磁随机存取存储器(MRAM)的无振铃位寻址方案，该方案允许MRAM在1 GHz以上的超高写入速率下工作。结果是通过对脉冲施加过程中MRAM自由层的磁化动力学的单自旋模拟得到的。与传统的MRAM位寻址一样，通过两个半选场脉冲的叠加来获得所选单元的切换。对于弹道比特寻址，脉冲被定制以获得用于单元的切换和非切换的情况下的优化轨迹：(I)被选择用于磁化反转的单元以磁化的半个进动圈数进行弹道反转；(Ii)暴露在磁场脉冲中但没有被选择用于切换的单元经历磁化的全进动圈数。在这两种情况下，在脉冲衰减时，磁化强度都在沿易磁化轴的平衡取向附近，磁化强度的振铃被抑制。
In this work a ringing free bit addressing scheme for magnetic random access memories (MRAM) is presented which allows MRAM operation with ultra high write rates above 1 GHz. The results are obtained using single spin simulations of the magnetization dynamics of an MRAM free layer during pulse application. Like in conventional MRAM bit addressing the switching of a selected cell is obtained by the superposition of two half-select field pulses. For ballistic bit addressing the pulses are tailored to obtain optimized trajectories both for the case of switching and non-swichting of the cell: (i) a cell which is selected for magnetization reversal switches ballistically by a half precessional turn of the magnetization; (ii) a cell which is exposed to a magnetic field pulse but which is not selected for switching undergoes a full precessional turn of the magnetization. In both cases the magnetization is near the equilibrium orientation along the easy axis upon pulse decay and ringing of the magnetization is suppressed.