Fluorinated graphene FETs controlled by Ionic Liquid Gate
Fluorinated graphene FETs controlled by Ionic Liquid Gate
复制标题
由离子液体门控制的氟化石墨烯 FET
DOI：
10.1109/jdt.2014.2332636
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Hatano,
中科院分区：
文献类型：
--
作者：
Furuyama;K. Tahara;A. Matsutani;T. Iwasaki;M. Hatano,
展示了具有离子液体（IL）顶栅的氟化石墨烯场效应晶体管（FET）。制备了用不同氟浓度官能化的氟化石墨烯。由离子液体门控（ILG）控制的高度氟化的石墨烯FET表现出比原始（非氟化）石墨烯FET更高的开/关比，而常规背门控（BG）配置导致更低的开/关比。由于IL和氟化石墨烯之间的双电层的极高电场效应，ILG可以在具有局域态的氟化石墨烯中诱导高电荷密度。因此，通过石墨烯纳米粒子和ILG的组合获得了更高的开/关比。
Fluorinated graphene field effect transistors (FETs) with an ionic liquid (IL) top-gate are demonstrated. Fluorinated graphene functionalized with different fluorine concentrations were prepared. Highly fluorinated graphene FETs controlled by ionic liquid gating (ILG) exhibited higher on/off ratios than pristine (non-fluorinated) graphene FET, while conventional back gating (BG) configuration resulted in lower on/off ratios. ILG can induce high charge density in fluorinated graphene with localized states because of extremely high electric field effect of an electric double layer between IL and fluorinated graphene. Thus, a higher on/off ratio was obtained by the combination of graphene fluorination and ILG.