1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide
1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide
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DOI：
10.1063/1.1304838
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发表时间：
2000-08-15
影响因子：
3.2
通讯作者：
Kim, DS
中科院分区：
文献类型：
--
作者：
Han, HS;Seo, SY;Kim, DS
1.54研究了掺铒富硅氧化硅（SRSO）中Er ~（3+）的光致发光和波导特性。在950 ℃退火至少5 min，在1at. SRSO中的%过量硅对于铒的激发由载流子主导是必要的。测量了掺铒SRSO薄膜的折射率和体波导损耗。%的铒和lat.在最佳退火处理后，%过量硅分别为1.4817和4.0dB/cm。利用标准的Si工艺技术制备了掺铒SRSO条形波导，并通过这种条形波导实现了1.54 μ m Er ~（3+）的内部发射。(C)2000年美国物理学会。【S0021-8979（00）01215-9】。
1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Optimum Er3+ luminescence was obtained after an anneal of at least 5 min at 950 degrees C, and at least 1 at. % excess silicon in SRSO was necessary for the excitation of erbium to be dominated by carriers. The refractive index and the bulk waveguide loss of erbium-doped SRSO film with 0.1 at. % erbium and 1 at. % excess silicon after the optimal anneal treatment was 1.4817 and 4.0 dB/cm, respectively. Fabrication of an erbium-doped SRSO strip waveguide using the standard Si processing techniques and the guiding of internal 1.54 mu m Er3+ emission by such a strip waveguide are demonstrated. (C) 2000 American Institute of Physics. [S0021-8979(00)01215-9].