Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices
Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices
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DOI：
10.1063/1.1288021
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发表时间：
2000-08
影响因子：
3.2
通讯作者：
T. W. Kim;D. U. Lee;Y. Yoon
中科院分区：
文献类型：
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作者：
T. W. Kim;D. U. Lee;Y. Yoon
采用射频磁控溅射法在p-InP（100）衬底上低温生长了SnO 2薄膜。透射电子显微镜（TEM）和电子衍射图谱的测量表明，这些SnO 2薄膜的纳米晶。室温下的电容-电压测量表明，名义上未掺杂的SnO 2膜的类型和载流子浓度分别为n型和约1.62×1016 cm-3。拉曼散射测量表明，纳米晶薄膜的晶粒尺寸小于10 nm，这与高分辨率TEM测量结果基本一致。光致发光测量显示在带间发射下方的宽峰。这些结果有助于提高对生长在p-InP（100）衬底上的SnO 2纳米晶薄膜在高灵敏度气体传感器中的应用的理解。
SnO2 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at low temperature. Transmission electron microscopy (TEM) and electron diffraction pattern measurements showed that these SnO2 thin films were nanocrystalline. The capacitance–voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.62×1016 cm−3, respectively. Raman scattering measurements showed that the grain sizes of the nanocrystalline films were below 10 nm, which was in reasonable agreement with the result obtained from the high-resolution TEM measurements. Photoluminescence measurements showed a broad peak below the band-to-band emission. These results can help improve the understanding of SnO2 nanocrystalline films grown on p-InP (100) substrates for applications in high-sensitivity gas sensors.