Imaging of near-neighbor atoms in semiconductors by photoelectron holography.
Imaging of near-neighbor atoms in semiconductors by photoelectron holography.
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通过光电子全息术对半导体中的近邻原子进行成像。
DOI：
10.1103/physrevlett.68.650
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发表时间：
1992
影响因子：
8.6
通讯作者：
Fadley
中科院分区：
文献类型：
--
作者：
Herman;Thevuthasan;Trần;Kim;Fadley
We have measured and calculated the full intensity profiles for Si 2{ital p} photoelectron emission from Si(111), and have analyzed these via a two-dimensional Fourier-transform holographic inversion procedure. The resulting images associated with two symmetry-inequivalent emitter types exhibit elongated features corresponding to near-neighbor atoms in the first (111) double layer above a given emitter, and are found to improve in quality if strong forward-scattering peaks are removed in a smooth way.
