Ultrathin MgB2 films fabricated by molecular beam epitaxy and rapid annealing
Ultrathin MgB2 films fabricated by molecular beam epitaxy and rapid annealing
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DOI：
10.1088/0953-2048/26/3/035005
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发表时间：
2013-03
影响因子：
3.6
通讯作者：
H. Shibata;T. Akazaki;Y. Tokura
中科院分区：
文献类型：
--
作者：
H. Shibata;T. Akazaki;Y. Tokura
采用分子束外延和快速退火技术制备了厚度在5 ~ 50 nm之间的超薄MgB 2薄膜。快速退火提高了Tc和Jc，而没有降低表面平整度。10 nm厚的膜显示Tc（0）= 24 K，Jc（0）= 8 × 106 A cm−2，均方根粗糙度为0.35 nm。横截面透射电子显微镜和能量色散谱元素分析也表明，MgB 2膜的表面被氧化至5 nm的厚度。
Ultrathin MgB2 films with thicknesses between 5 and 50 nm were fabricated using molecular-beam epitaxy and rapid annealing. The rapid annealing increases Tc and Jc without degrading the surface flatness. A 10 nm-thick film shows Tc(0) = 24 K, Jc(0) = 8 × 106 A cm−2 with a root mean square roughness of 0.35 nm. Cross-sectional transmission electron microscopy and energy dispersion spectroscopy elemental analyses also revealed that the surfaces of the MgB2 films are oxidized to a thickness of 5 nm.