High output mode-locked laser empowered by defect regulation in 2D Bi(2)O(2)Se saturable absorber.
High output mode-locked laser empowered by defect regulation in 2D Bi(2)O(2)Se saturable absorber.
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二维 Bi2O2Se 可饱和吸收体缺陷调节增强高输出锁模激光器
DOI:
10.1038/s41467-022-31606-8
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发表时间:
2022-07-05
影响因子:
16.6
通讯作者:
Ni, Zhenhua
中科院分区:
文献类型:
--
作者:
Liu, Junting;Yang, Fang;Lu, Junpeng;Ye, Shuai;Guo, Haowen;Nie, Hongkun;Zhang, Jialin;He, Jingliang;Zhang, Baitao;Ni, Zhenhua
Atomically thin Bi2O2Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi2O2Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi2O2Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar+ plasma treatments are employed to precisely regulate the O and Se defect states in Bi2O2Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm−2 after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration. Bi2O2Se holds potential for the realization of 2D optical modulators due to its broadband nonlinear response, air stability and carrier mobility. Here, the authors report the realization of defect-engineered Bi2O2Se nanoplates as saturable absorbers for femtosecond solid-state lasers, showing improved output power and pulse duration.
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影响因子:
16.6
作者:
Guddala S;Kawaguchi Y;Komissarenko F;Kiriushechkina S;Vakulenko A;Chen K;Alù A;M Menon V;Khanikaev AB
通讯作者:
Khanikaev AB
影响因子:
11
作者:
Jiang, Xiantao;Liu, Shunxiang;Zhang, Han
通讯作者:
Zhang, Han
影响因子:
3.8
作者:
Jung, Minwan;Lee, Junsu;Lee, Ju Han
通讯作者:
Lee, Ju Han
影响因子:
3.7
作者:
Liu, Dong;Liu, Junting;Yang, Zai-xing
通讯作者:
Yang, Zai-xing
影响因子:
17.1
作者:
Nie, Zhaogang;Long, Run;Loh, Zhi-Heng
通讯作者:
Loh, Zhi-Heng