Gold implanted germanium photoswitch for cavity dumping of a free-electron laser
Gold implanted germanium photoswitch for cavity dumping of a free-electron laser
复制标题
用于自由电子激光器空腔倾倒的金注入锗光电开关
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
A. Pashkin
中科院分区：
文献类型：
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作者：
R. Rana;J. Klopf;C. Ciano;Abhishek Singh;S. Winnerl;H. Schneider;M. Helm;A. Pashkin
我们提出了一种基于金注入锗（Ge：Au）的等离子体开关作为一个潜在的候选人，有效的自由电子激光器（FEL）的腔转储。Ge：Au具有亚纳秒的载流子寿命，比自由电子激光脉冲周期（77 ns）短得多，并且在6 ~ 90 μm的红外波段范围内具有很高的光致反射率。Ge：Au等离子体开关在“关“状态下对自由电子激光辐射的吸收可以忽略不计，并且对于几瓦的入射自由电子激光功率仅需要适度的热电冷却。在本研究的整个光谱范围内，在“开”状态下的反射率水平超过50%。相应的光泵注量与自由电子激光频率呈线性关系。我们的模拟强调了有限的亚微米厚度的光致反射等离子体层的作用，证实了这种缩放。实验表明，该装置是有前途的实现自由电子激光腔倒空的实验，同时需要较高的脉冲能量和较低的平均功率。
We present a plasma switch based on gold-implanted germanium (Ge:Au) as a potential candidate for efficient cavity dumping of a free-electron laser (FEL). Ge:Au has a sub-nanosecond carrier lifetime—much shorter than the FEL pulsing period of 77 ns—and demonstrates a high photoinduced reflectivity in a broad range of infrared wavelengths from 6 to 90 μm. The Ge:Au plasma switch exhibits negligible absorption of the FEL radiation in the “off ” state and requires only moderate thermoelectric cooling for incident FEL power of several Watts. A reflectivity level of more than 50% in the “on” state is achieved over the entire spectral range of this study. The corresponding optical pump fluence exhibits a linear relationship with the FEL frequency. This scaling is corroborated by our simulations highlighting the role of a finite sub-μm thickness of the photoinduced reflecting plasma layer. The demonstrated device is promising for the realization of the FEL cavity dumping for experiments that simultaneously require higher pulse energy and lower average power.
影响因子：
16.6
作者：
Sajadi M;Wolf M;Kampfrath T
通讯作者：
Kampfrath T
影响因子：
10.8
作者：
Jacob, Rainer;Winnerl, Stephan;Helm, Manfred
通讯作者：
Helm, Manfred