Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
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DOI：
10.1002/aelm.202001210
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发表时间：
2021-03
影响因子：
6.2
通讯作者：
Zhenxing Wang;Andreas Hemmetter;B. Uzlu;M. Saeed;A. Hamed;S. Kataria;R. Negra;D. Neumaier;M. Lemme
中科院分区：
文献类型：
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作者：
Zhenxing Wang;Andreas Hemmetter;B. Uzlu;M. Saeed;A. Hamed;S. Kataria;R. Negra;D. Neumaier;M. Lemme
本文综述了由二维材料石墨烯和传统三维材料的异质结构制成的二极管。重点介绍了高频电子学和光电子学中的几种应用。特别是，金属-绝缘体-石墨烯（Metal-Insulator-Graphene，简称SOI）二极管相对于传统的金属-绝缘体-金属二极管的优势，讨论了相关的品质因数。该概念扩展到一维二极管。几个实验实现的射频电路的应用与有源元件的二极管。此外，石墨烯-硅肖特基二极管以及肖特基二极管在其光电探测的潜力方面进行了审查。在这里，基于石墨烯的二极管有可能在几个关键的品质因数方面优于传统的光电探测器，例如整体响应度或暗电流水平。显然，某些领域的优势可能以其他领域的劣势为代价，因此需要以特定于应用的方式定制2D/3D二极管。
Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal–insulator–graphene (MIG) diodes over conventional metal–insulator–metal diodes are discussed with respect to relevant figures‐of‐merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene‐silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene‐based diodes have the potential to outperform conventional photodetectors in several key figures‐of‐merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application‐specific ways.