Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
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DOI：
10.1063/1.3120267
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发表时间：
2009-04
影响因子：
4
通讯作者：
X. L. Yang;Weiming Zhu;Chengduo Wang;H. Fang;Tianzhi Yu;Z. Yang;G. Zhang;X. Qin;R. Yu;Benson Wang
中科院分区：
文献类型：
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作者：
X. L. Yang;Weiming Zhu;Chengduo Wang;H. Fang;Tianzhi Yu;Z. Yang;G. Zhang;X. Qin;R. Yu;Benson Wang
The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as VN-MnGa complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.
