Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates
Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates
复制标题
通过 MOCVD 在 Si 图案化衬底上生长的非极性 (1-100) 和半极性 (1-101)GaN 的光学特性
DOI:
10.1117/12.875861
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发表时间:
2011
影响因子:
1.8
通讯作者:
H. Morkoç
中科院分区:
文献类型:
--
作者:
N. Izyumskaya;S. Liu;S. Okur;M. Wu;V. Avrutin;Ü. Özgür;S. Metzner;F. Bertram;J. Christen;L. Zhou;D. Smith;H. Morkoç
Non-polar (1-100 ) and semipolar (1-101)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-101) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-101) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-100 ) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-101) -oriented GaN are encouraging.