High energy density metal-insulator-metal capacitors with Ba[(Ni1∕2,W1∕2)0.1Ti0.9]O3 thin films
High energy density metal-insulator-metal capacitors with Ba[(Ni1∕2,W1∕2)0.1Ti0.9]O3 thin films
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DOI：
10.1063/1.2828700
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发表时间：
2008-01
影响因子：
4
通讯作者：
N. Karan;J. Saavedra-Arias;M. Pérez;Reji Thomas;R. Katiyar
中科院分区：
文献类型：
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作者：
N. Karan;J. Saavedra-Arias;M. Pérez;Reji Thomas;R. Katiyar
采用化学溶液沉积技术制备了高k Ba[（Ni1scin2，W1scin2）0.1Ti0.9]O3薄膜电容器。在室温下，该薄膜具有高的介电常数（85）、低的介电损耗（0.007）和高的击穿场强（1.33MV scincm）。在室温（300±25K）附近，电容和损耗角正切的温度和频率依赖性较小。在室温下，获得了高电容密度（3.1fF scincm 2）沿着的高能量密度（34 J scincm 3）和低漏电流（7.7×10−6A scincm 2，20 V），表明该材料在集成电路和电力电子应用中具有很高的潜力。
Metal-insulator-metal capacitors with high-k Ba[(Ni1∕2,W1∕2)0.1Ti0.9]O3 thin film dielectrics were fabricated by chemical solution deposition technique. High dielectric constant (85), low dielectric loss (0.007), and high breakdown field (∼3.0MV∕cm) at room temperature were achieved. The temperature and frequency dependences of capacitance and loss tangent were small around room temperature (300±25K). At room temperature, high capacitance density (3.1fF∕μm2) along with high energy density (34J∕cm3) and low leakage current (7.7×10−6A∕cm2 at 20V) were obtained, indicating high potential for this material in the integrated circuits and power electronic applications.