Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells
Room-temperature dephasing time of intersubband transitions in heavily-doped InGaAs/AlAs/AlAsSb coupled quantum wells
复制标题
重掺杂InGaAs/AlAs/AlAsSb耦合量子阱中子带间跃迁的室温相移时间
DOI：
10.1063/1.1606500
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发表时间：
2003
影响因子：
4
通讯作者：
H. Ishikawa
中科院分区：
文献类型：
--
作者：
A. Gopal;H. Yoshida;T. Simoyama;J. Kasai;T. Mozume;H. Ishikawa
给出了InGaAs/AlAs/AlAsSb耦合双量子阱中1.55μm亚带跃迁的室温退相时间(T2)的估算结果。在该材料中，我们还研究了四波混频衰减时间与入射激发强度之间的掺杂密度依赖关系。在掺杂到2×10~(19) cm~(-3)的样品中，T_2值约为292±40 f_s，这与先前的计算结果符合得很好。
Room-temperature dephasing time (T2) estimates of 1.55 μm intersubband transitions (ISBT) are presented in InGaAs/AlAs/AlAsSb coupled double quantum wells. In this material, optimized for ISBT at communication wavelengths for all-optic switching application, we also studied the doping-density dependence of the four-wave-mixing decay time as a function of incident excitation intensity. A T2 value of about 292±40 fs is estimated at an intensity corresponding to the saturation intensity in samples that are doped to 2×1019 cm−3. This value is in good agreement with the value estimated from earlier calculations.