Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
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低压 ECR-RIBE 低损伤 GaInAs(P)/InP 纳米结构
DOI：
10.1143/jjap.29.l1744
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发表时间：
1990
影响因子：
1.5
通讯作者：
Y. Suematsu
中科院分区：
文献类型：
--
作者：
K. G. Ravikumar;K. Kudo;S. Arai;Y. Suematsu
利用电子回旋共振反应离子束刻蚀（ECR-RIBE）系统，首次在低离子萃取电压（20 V）和低压刻蚀气体（5×10-6 Torr）下，在GaInAs/GaInAsP/InP多量子阱层中形成了70 nm ~ 25 nm宽的低缺陷纳米结构。考虑到GaInAs/GaInAsP层的剩余体积，蚀刻和轻微清洗后的室温光致发光峰值强度几乎是蚀刻前的60%，这证明了本蚀刻方法的极低损伤性质。此外，我们还首次报道了利用LP-ECR-RIBE制备多层GaInAs/InP量子线（3周期）结构。
Low defect nanometer structures of 70 nm ∼25 nm width are formed in GaInAs/GaInAsP/InP multi-quantum-well layers with low ion extraction voltage (20 V) and at low-pressure (LP) of etching gas (5×10-6 Torr) using electron cyclotron resonance reactive ion beam etching (ECR-RIBE) system for the first time. The room temperature photoluminescence peak intensity after etching and slight cleaning, taking into account the remaining volume of the GaInAs/GaInAsP layer, was almost 60% of that before etching, which proved the very low-damage nature of the present etching method. Moreover we also report for the first time the fabrication of multi-layered GaInAs/InP quantum wire (3 periods) structure using LP-ECR-RIBE.