Stress controlled pulsed direct current co-sputtered Al1-xScxN as piezoelectric phase for micromechanical sensor applications
Stress controlled pulsed direct current co-sputtered Al1-xScxN as piezoelectric phase for micromechanical sensor applications
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DOI：
10.1063/1.4934756
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发表时间：
2015-11-01
期刊：
影响因子：
6.1
通讯作者：
Wagner, Bernhard
中科院分区：
文献类型：
--
作者：
Fichtner, Simon;Reimer, Tim;Wagner, Bernhard
钪合金氮化铝（Al1-xScxN）薄膜是通过反应脉冲直流共溅射单独的钪和铝靶材制备的，x
Scandium alloyed aluminum nitride (Al1-xScxN) thin films were fabricated by reactive pulsed direct current co-sputtering of separate scandium and aluminum targets with x