Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations
Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations
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不同晶向EuSe薄膜的外延生长及磁性表征
DOI：
10.1063/5.0075827
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发表时间：
2021-06
影响因子：
3.2
通讯作者：
Ying Wang;Xinyu Liu;S. Bac;Jiashu Wang;J. Furdyna;B. Assaf;M. Zhukovskyi;T. Orlova;V. Lauter;N. Dilley;L. Rokhinson
中科院分区：
文献类型：
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作者：
Ying Wang;Xinyu Liu;S. Bac;Jiashu Wang;J. Furdyna;B. Assaf;M. Zhukovskyi;T. Orlova;V. Lauter;N. Dilley;L. Rokhinson
报道了用分子束外延技术在BaF2、Pb1-xEuxSe、GaAs和Bi2Se衬底上生长EuSe薄膜的不同生长模式和相应的磁性。结果表明，EuSe在GaAs(111)和Bi2Se上主要沿(001)晶向生长，而在BaF2(111)和Pb1-xEuxSe(111)上主要沿(111)晶向生长。高分辨电子显微镜测量表明，(001)和(111)EuSe薄膜都有一个陡峭且高度结晶的界面。与前人的研究一致，有序磁性相包括反铁磁性相、亚铁磁性相和铁磁性相。与以往的研究相比，我们发现反铁磁-亚铁磁转变具有很强的滞后效应。在Bi2Se上生长EuSe外延膜和在EuSe上生长Bi2Se3外延膜的能力使我们能够进一步研究绝缘变磁材料和拓扑绝缘体各相之间的界面交换作用。
We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.