Empirical low-field mobility model for III-V compounds applicable in device simulation codes
Empirical low-field mobility model for III-V compounds applicable in device simulation codes
复制标题
DOI：
10.1063/1.372274
复制
发表时间：
2000-03-15
影响因子：
3.2
通讯作者：
Rezazadeh, AA
中科院分区：
文献类型：
--
作者：
Sotoodeh, M;Khalid, AH;Rezazadeh, AA
A Caughey-Thomas-like mobility model with temperature and composition dependent coefficients is used in this work to describe the dependence of electron and hole mobilities on temperature, doping concentration, and alloy composition. Appropriate parameter sets are given for a large number of III-V binary and ternary compounds, including: GaAs, InP, InAs, AlAs, GaP, Al0.3Ga0.7As, In0.52Al0.48As, In0.53Ga0.47As, and In0.49Ga0.51P. Additionally, physically justifiable interpolation schemes are suggested to find the mobilities of various ternary and quaternary compounds (such as AlxGa1-xAs, In1-xGaxP, In1-xGaxAs, In1-xAlxAs, and In1-xGaxAsyP1-y) in the entire range of composition. The models are compared with numerous measured Hall data in the literature and very good agreement is observed. The limitations of the present model are also discussed. The results of this work should be extremely useful in device simulation packages, which are currently lacking a reliable mobility model for the above materials. (C) 2000 American Institute of Physics. [S0021-8979(00)03606-9].
