Radio-Frequency Capacitive Gate-Based Sensing
Radio-Frequency Capacitive Gate-Based Sensing
复制标题
DOI：
10.1103/physrevapplied.10.014018
复制
发表时间：
2018-07-19
影响因子：
4.6
通讯作者：
Gonzalez-Zalba, M. Fernando
中科院分区：
文献类型：
--
作者：
Ahmed, Imtiaz;Haigh, James A.;Gonzalez-Zalba, M. Fernando
开发快速、准确和可扩展的量子态读出技术是基于光子晶体的量子计算中的一个活跃领域。在这里，我们提出的硅角态量子点耦合到集总元件电谐振器通过栅极的色散传感的结果。量子器件的栅极电容与超导螺旋电感器并联放置，导致谐振器的负载Q因子在400-800范围内。我们利用谐振器工作在330和616 MHz，并实现7.7和1.3 μ e/根Hz的电荷灵敏度，分别。我们进行的谐振器的参数研究，以揭示其最佳的工作点，并进行电路分析，以确定最佳的谐振器设计。结果将基于栅极的传感与最好的射频单电子晶体管灵敏度相提并论，同时提供了一种快速紧凑的量子态读出方法。
Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded Q factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3 mu e/root Hz, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.