Physical properties of spin-on solution deposited Bi4Ti3O12 thin films on Si substrates
Physical properties of spin-on solution deposited Bi4Ti3O12 thin films on Si substrates
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Si 衬底上旋涂溶液沉积 Bi4Ti3O12 薄膜的物理性质
DOI：
10.1080/00150199708228364
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
D. Hesse
中科院分区：
文献类型：
--
作者：
M. Alexe;A. Pignolet;S. Senz;D. Hesse
摘要利用旋涂溶液和金属有机分解技术，在硅衬底上直接沉积了Bi4Ti3O12薄膜。晶化是通过在550[DDOT]G-700°C范围内的热退火来进行的。用X射线衍射仪、扫描电子显微镜和原子力显微镜对薄膜的结构和形貌进行了研究。用椭圆偏振光谱仪测量了Bi4Ti3O12薄膜的折射率色散。通过C-V和I-V测量对MFS结构进行了电学表征。从确认滞后行为的C-V测量结果来看，600°C下退火后的记忆窗口的最大值为3.35 V，575°C下退火后的相对介电常数最大值为90。I-V特性是不对称的，在零偏压下存在磁滞和非零电流。提出了几种可能的解释来解释这种暂态电流。
Abstract Using spin-on solution and metalorganic decomposition, thin Bi4Ti3O12 films were deposited directly onto silicon substrates. Crystallization was performed by thermal annealing at temperatures in the 550[ddot]G-700°C range. The film structure and morphology were investigated by X-ray diffraction, scanning electron mycroscopy and atomic force microscopy. The dispersion of the refractive index for Bi4Ti3O12 thin films was measured using spectroscopic ellipsometry. The MFS structures were electrically characterized by C-V and I-V measurements. From C-V measurements, which confirm hysteretic behavior, the memory window has a maximum value of 3.35 V for an annealing at 600°C, and the relative permittivity has a maximum value of 90 after annealing at 575°C. The I-V characteristic is asymmetric, with a hysteresis and a non-zero current at zero applied bias. Several possible explanations are proposed to explain this transient current.