Preparation of zirconium oxide thin film using inductively coupled oxygen plasma sputtering
Preparation of zirconium oxide thin film using inductively coupled oxygen plasma sputtering
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DOI：
10.1016/j.surfcoat.2004.08.102
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发表时间：
2005-06
影响因子：
5.4
通讯作者：
Y. Ohtsu;M. Egami;H. Fujita;K. Yukimura
中科院分区：
文献类型：
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作者：
Y. Ohtsu;M. Egami;H. Fujita;K. Yukimura
为了保护中国和瓷器免受金属污染和/或保持其拒水性能，采用氧射频电感耦合等离子体负偏压溅射法制备了氧化锆薄膜。干法制备薄膜是为了解决现有湿法工艺带来的环境问题而提出的。化学计量比的氧化锆薄膜是在非晶态下制备的。结果表明，原始基片中国与瓷片的接触角约为30°，而制备的薄膜具有约90°的拒水特性。所得薄膜的水接触角与传统的溶胶-凝胶法相近。结果表明，这种射频等离子体溅射干燥工艺对改善中国和瓷器的表面状态是有效的。
A zirconium oxide (ZrO2) thin film was prepared using oxygen radio frequency (RF) inductively coupled plasma (ICP) sputtering of the zirconium target with a negative bias in order to protect china and porcelain from metallic contamination and/or to keep their water-repellent nature. The film prepared by dry process is proposed in order to solve environmental problems caused by an existing wet process. The stoichiometric ZrO2film is prepared in an amorphous state. It was found that the original substrate, china and porcelain, had a water-contact angle of about 30°, while the prepared film showed a water-repellent nature with an angle of about 90°. The water contact angle of the prepared film was similar to that of the conventional sol–gel method. From these results, this dry process using RF plasma sputtering was certified to be effective in modifying the surface state of china and porcelain.