A study of piezoelectric orthorhombic Ta2O5
A study of piezoelectric orthorhombic Ta2O5
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DOI：
10.1557/jmr.1998.0062
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发表时间：
1998-02-01
影响因子：
2.7
通讯作者：
Viljoen, HJ
中科院分区：
文献类型：
--
作者：
Jooste, BR;Viljoen, HJ
1985年首次报道了单斜晶系Ta2O5具有与ZnO相当的压电性能。在这项工作中，我们报告的沉积，表征和定性评估的压电行为的正交Ta2O5。采用反应磁控溅射法在316L不锈钢基体上存款Ta2O5薄膜。在没有衬底加热的情况下，结晶度差。快速热退火改善了结晶度。正交相主要存在于所有基板上。定性评估了压电性能，包括650摄氏度的高温测试。
In 1985 it was first reported that monoclinic Ta2O5 has piezoelectric properties comparable to ZnO. In this work we report on the deposition, characterization, and qualitative assessment of the piezoelectric behavior of orthorhombic Ta2O5. Reactive magnetron sputtering was used to deposit thin films of Ta2O5 onto substrates of 316L stainless steel. Without substrate heating the crystallinity was poor. A rapid thermal anneal improved the crystallinity. The orthorhombic phase was dominantly present on all substrates. The piezoelectric property was qualitatively assessed, including a high temperature test at 650 degrees C.