Molecular Beam Epitaxial Growth of InAs
Molecular Beam Epitaxial Growth of InAs
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InAs 分子束外延生长
DOI：
10.1143/jjap.16.2131
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发表时间：
1977
影响因子：
1.5
通讯作者：
M. Kimata
中科院分区：
文献类型：
--
作者：
M. Yano;M. Nogami;Y. Matsushima;M. Kimata
用分子束外延技术在GaAs（100）面上异质外延生长了InAs薄膜。通过光学显微镜、扫描电镜、RHEED和电学测试对薄膜进行了表征。尽管InAs和GaAs之间存在较大的晶格失配，但获得了镜面InAs薄膜。未掺杂的InAs薄膜显示出n型导电，并且它们的电子浓度和迁移率随生长过程中的衬底温度（Ts）而变化。在Ts=480°C下，生长具有高结晶质量和平坦表面的单晶膜。此外，在MBE生长过程中，Mg原子被成功地掺杂到InAs中，以获得p型薄膜。
Thin crystalline films of InAs have been heteroepitaxially grown on (100) surface of GaAs by molecular beam epitaxy. The films are evaluated by optical microscope, SEM, RHEED and electrical measurements. In spite of the existence of a large lattice mismatch between InAs and GaAs, specular InAs films are obtained. Undoped InAs films show the n-type conduction, and their electron concentrations and mobilities are varied depending on the substrate temperature (Ts) during growth. At Ts=480°C, single crystalline films with high crystallographic quality and flat surfaces are grown. Furthermore, Mg atoms are successfully doped into InAs during the MBE growth to obtain p-type films.