Detailed analysis of nonidealities in MOS fully integrated active RC filters based on balanced netwo
Detailed analysis of nonidealities in MOS fully integrated active RC filters based on balanced netwo
复制标题
基于平衡网络的MOS全集成有源RC滤波器非理想性详解
DOI:
10.1049/ip-g-1.1984.0036
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发表时间:
1984
期刊:
影响因子:
--
通讯作者:
Y. Tsividis
中科院分区:
文献类型:
--
作者:
M. Banu;Y. Tsividis
The paper gives a detailed account of the effects produced by practical nonidealities in fully integrated balanced RC filters, which are implemented using MOS transistors as replacements for resistors (MOSFET-capacitor continuous-time filters). It is found that the operation of such filters is insensitive to all typical nonidealities, with the exception of the intrinsic distributed parasitic capacitances of the transistors; there are cases when the latter have to be taken into account in the filter design.