Optical properties of phosphorus‐doped polycrystalline silicon layers
Optical properties of phosphorus‐doped polycrystalline silicon layers
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磷掺杂多晶硅层的光学特性
DOI：
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发表时间：
1981
期刊：
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通讯作者：
E. A. Trabka
中科院分区：
文献类型：
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作者：
G. Lubberts;B. Burkey;F. Moser;E. A. Trabka
通过透射率和反射率测量获得了注入不同剂量磷的低压化学气相沉积多晶硅（polySi）的折射率和吸收系数。多晶硅的折射率对光谱可见区的掺杂相对不敏感，并且与单晶Si的公布值相当一致。这些薄膜的吸收系数在可见光区随着掺杂而降低。然而，对应于最高掺杂膜（N = 3×1020/cm 3）的吸收系数几乎是轻掺杂单晶Si的公布值的两倍。在红外区，随着掺杂，折射率系统地减小，吸收系数系统地增加。光学参数对掺杂的这种依赖性归因于自由载流子的存在。将自由载流子色散/吸收模型应用于1.2-1.8 μm区域的测量折射率和...
The index of refraction and the absorption coefficient of low‐pressure chemical vapor deposited polycrystalline silicon (poly Si) implanted with various doses of phosphorus were obtained by means of transmittance and reflectance measurements. The refractive index of poly Si is relatively insensitive to doping in the visible region of the spectrum and agrees quite well with published values for single‐crystal Si. The absorption coefficient of these films decreases with doping in the visible. Nevertheless, the absorption coefficient corresponding to the highest‐doped film (N≊3×1020/cm3) is almost twice the published values for lightly doped single‐crystal Si. In the infrared, the index of refraction decreases systematically and the absorption coefficient increases systematically with doping. This dependence of the optical parameters on doping is attributed to the presence of free carriers. A free‐carrier dispersion/absorption model is applied to the measured refractive index in the region 1.2–1.8 μm and to ...