Depletion width in SrTiO3 and BaxSr1−xTiO3 films
Depletion width in SrTiO3 and BaxSr1−xTiO3 films
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SrTiO3 和 BaxSr1−xTiO3 薄膜中的耗尽宽度
DOI：
10.1080/00150199908015766
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发表时间：
1999
期刊：
影响因子：
0.8
通讯作者：
J. Scott
中科院分区：
文献类型：
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作者：
J. Scott
摘要本文仅总结了特邀综述中的新内容，其总体性质是涵盖铁电薄膜存储器的器件模型，包括通常在铂电极上的钽酸锶铋(SBT)、钛酸锶钡(BST)和锆钛酸铅(PZT)。在下面的书面版本中，我将讨论限于BST DRAM电影。与Dietz等人早期的无陷阱模型相关的三个问题。它们是一致的：耗尽宽度(假设它们与整个薄膜一样厚)；有效理查森系数A**，实验发现比无陷阱模型预测的小一百万倍；电负性系数S=dφBn/dχ，它们假设为1，但实际上约为0.7。利用Dietz等人的工作中肖特基势垒内的介电常数的值。Isϵ=5.5=ϵop=n2，其中n是折射率，我计算了耗尽宽度D的值，发现它是<；10 nm，…
Abstract This text summarizes only what was new in an invited review, the overal nature of which was to cover device models for ferroelectric thin film memories, including strontium bismuth tantalate (SBT), barium strontium titanate (BST), and lead zirconate titanate (PZT), generally on platinum electrodes. In the written version below I limit the discussion to BST DRAM films. Three problems associated with the earlier trap-free models of Dietz et al. are reconciled: Depletion widths (assumed by them to be as thick as the total film; effective Richardson coefficients A**, found experimentally to be a million times smaller than predicted by trap-free models; and electronegativity coefficient S = dφBn/dχ, assumed by them to be unity but actually ca. 0.7. Using the result that the value of the dielectric constant within the Schottky barrier in the work of Dietz et al. is ϵ = 5.5 = ϵop = n2, where n is the index of refraction, I have calculated the value of the depletion width d. and find that it is < 10 nm, ...