Solution-processed high-efficiency cadmium-free Cu-Zn-In-S-based quantum-dot light-emitting diodes with low turn-on voltage
Solution-processed high-efficiency cadmium-free Cu-Zn-In-S-based quantum-dot light-emitting diodes with low turn-on voltage
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DOI：
10.1016/j.orgel.2016.05.040
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发表时间：
2016-09
影响因子：
3.2
通讯作者：
Zhenyang Liu;K. Zhao;A. Tang;Yihao Xie;L. Qian;Weiran Cao;Yixing Yang;Yu Chen;F. Teng
中科院分区：
文献类型：
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作者：
Zhenyang Liu;K. Zhao;A. Tang;Yihao Xie;L. Qian;Weiran Cao;Yixing Yang;Yu Chen;F. Teng
利用不同颜色的Cu-In-Zn-S/ZnS核/壳胶体半导体纳米晶体（nc）作为发射层夹在ZnO纳米粒子的有机空穴传输层和电子传输层之间，通过简单的溶液处理技术制备出了高效的绿、黄、红量子点发光器件（qled）。该黄色qled具有1.8 V的低导通电压和3061 cd/m2的高亮度，峰值外量子效率（EQE）为2.42%。相比之下，绿色和红色qled的导通电压较低，为2 V，电致发光峰位于540 nm和642 nm处，EQE分别为0.25%和0.91%。溶液处理的高效无镉qled具有低导通电压和良好的再现性，可能成为最有前途的下一代显示器之一。
High-efficiency green, yellow and red quantum-dot light emitting devices (QLEDs) have been fabricated via a simple solution-processed technique, in which different-colored Cu-In-Zn-S/ZnS core/shell colloidal semiconductor nanocrystals (NCs) are used as emissive layers sandwiched between an organic holes transport layer and an electron transport layer of ZnO nanoparticles. The yellow QLEDs exhibit a low turn-on voltage of 1.8 V and high luminance of 3061 cd/m2as well as the peak external quantum efficiency (EQE) of 2.42%. In contrast, the green and red QLEDs show a low turn-on voltage of 2 V, and their electroluminescence (EL) peaks are located at 540 and 642 nm with the peak EQE of 0.25% and 0.91%, respectively. The solution-processed high-efficiency cadmium-free QLEDs with a low turn-on voltage and good reproducibility may become one of the most promising next generation of display.