DNA sensing by field-effect transistors based on networks of carbon nanotubes
DNA sensing by field-effect transistors based on networks of carbon nanotubes
复制标题
DOI：
10.1021/ja075176g
复制
发表时间：
2007-11-21
影响因子：
15
通讯作者：
Mhaisalkar, S. G.
中科院分区：
文献类型：
--
作者：
Gui, Ee Ling;Li, Lain-Jong;Mhaisalkar, S. G.
本文报道了基于单壁碳纳米管（SWCNT）网络的Au和Cr接触场效应晶体管对脱氧核糖核酸（DNA）杂交的电检测传感机理。通过低温电测量的势垒高度提取提供了直接的证据的概念，电极和单壁碳纳米管之间的能级排列可以通过DNA固定和杂交的影响。利用光致抗蚀剂的位置选择性封盖的研究提供了全面的证据，即DNA的传感是由金属-单壁碳纳米管结的变化而不是通道电导的变化主导的。
We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evidence for the notion that the energy level alignment between electrode and SWCNTs can be affected by DNA immobilization and hybridization. The study of location-selective capping using photoresist provides comprehensive evidence that the sensing of DNA is dominated by the change in metal-SWCNT junctions rather than the channel conductance.