Thick film hybrid packaging techniques for 500/spl deg/C operation
Thick film hybrid packaging techniques for 500/spl deg/C operation
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适用于 500/spl deg/C 操作的厚膜混合封装技术
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
Mike Palmer
中科院分区：
文献类型：
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作者：
Jay;Salmon;R. W. Johnson;Mike Palmer
使用厚膜混合技术和 4H-SiC JFET 在定制氧化铝基板上构建源极跟随器电路。该电路适合在 300/spl deg/C 的温度下长期运行。因此，电路组件的各种组件（焊线、电阻器、芯片贴装、基板金属化）都在 500/spl deg/C 的高温下进行了加速可靠性测试。这些实验证实了基于 SiC 的电路可以在 300/spl deg/C 的温度下运行，而且还证明了未来电路在 500/spl deg/C 范围内运行的合理性。
A source follower circuit was constructed on a custom alumina substrate using thick film hybrid techniques and 4H-SiC JFETs. The circuit is intended for long term operation at a temperature of 300/spl deg/C. For this reason, the various components of the circuit assembly (wire bonds, resistors, die attach, substrate metalization) have undergone accelerated reliability testing at an elevated temperature of 500/spl deg/C. These experiments have confirmed the operation of SiC based circuits at a temperature of 300/spl deg/C, but also, prove the plausibility of future circuits operating in the 500/spl deg/C range.