Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite
Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite
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DOI：
10.1021/acs.nanolett.5b00411
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发表时间：
2015-07-01
期刊：
影响因子：
10.8
通讯作者：
Zhuang, Q.
中科院分区：
文献类型：
--
作者：
Anyebe, E. A.;Sanchez, A. M.;Zhuang, Q.
InAs 1-xSbx半导体纳米线在石墨衬底上的单片集成为光电子学和高速电子学中的成本效益，高性能和灵活的器件提供了巨大的希望。然而，由于Sb诱导的轴向生长抑制和径向生长增强，具有高纵横比的InAs 1-xSbx纳米线的生长对于器件应用至关重要，这是非常具有挑战性的。我们报告实现高品质，垂直排列，nontapered和cross-sectional ratio InAs 1-xSbx纳米线的Sb成分（x（Sb（%）高达12%相似的铟液滴辅助分子束外延生长在石墨衬底上。低温光致发光测量结果表明，InAs 1-xSbx纳米线表现出明亮的带到带相关的，具有明显的红移作为Sb组合物的函数的发射，提供了成功的Sb掺入在生长的纳米线的进一步确认。这项研究表明，石墨衬底是一个更有利的平台，InAs 1-xSbx纳米线，可以导致混合异质结构具有潜在的器件应用在光电子学。
The monolithic integration of InAs1-xSbx semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth Of InAs1-xSbx nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs1-xSbx nanowires with Sb composition (x(Sb(%))) up to % similar to 12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs1-xSbx nanowires exhibit bright band-to-band related,emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs1-xSbx nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.