Planar Hall effect in c-axis textured films of Bi85Sb15 topological insulator
Planar Hall effect in c-axis textured films of Bi85Sb15 topological insulator
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DOI：
10.1063/5.0049577
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发表时间：
2021-05-01
期刊：
影响因子：
1.6
通讯作者：
Paglione, Johnpierre
中科院分区：
文献类型：
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作者：
Budhani, Ramesh C.;Higgins, Joshua S.;Paglione, Johnpierre
报道了拓扑绝缘体Bi85Sb15多晶薄膜的平面霍尔效应和各向异性磁阻的测量结果。在载流子密度接近2×10(19)电子/厘米(3)的这些薄膜中观察到的Phe和AMR类似于金属铁磁薄膜中的面内场输运行为。然而，Phe(Delta Rho(Phe))和AMR(Delta Rho(Xx))的幅度是不同的。Delta Rho(Phe)和Delta Rho(Xx)在160K附近也经历了符号反转。我们将这些结果与已报道的拓扑绝缘体和Weyl半金属的Phe进行了比较，并讨论了这种非磁性合金中载流子各向异性后向散射的可能情况。
Measurements of the planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) in polycrystalline films of topological insulator Bi85Sb15 are reported. The observation of PHE and AMR in these films of carrier density approximate to 2 x 10(19) electrons/cm(3) is like the behavior of in-plane field transport in thin films of metallic ferromagnets. However, the amplitudes of PHE (Delta rho (PHE)) and AMR (Delta rho (xx)) are at variance. Delta rho (PHE) and Delta rho (xx) also undergo a sign reversal near approximate to 160 K. We compare these results with the reported PHE of topological insulators and Weyl semimetals and discuss possible scenarios for anisotropic backscattering of charge carriers in this non-magnetic alloy.