Employing TiO2 buffer layer to improve VO2 film phase transition performance and infrared solar energy modulation ability
Employing TiO2 buffer layer to improve VO2 film phase transition performance and infrared solar energy modulation ability
复制标题
DOI：
10.1016/j.jallcom.2016.05.233
复制
发表时间：
2016-11-05
影响因子：
6.2
通讯作者：
Lv, Weizhong
中科院分区：
文献类型：
--
作者：
Zhang, Dongping;Yang, Kai;Lv, Weizhong
采用TiO 2缓冲层在玻璃衬底上生长VO 2薄膜。采用XRD、SEM、分光光度计和四探针技术对样品的结晶度、微观结构、光学和电学性能进行了表征。实验结果表明，该薄膜具有较高的晶体质量，具有VO 2（011）择优晶格取向、致密的均匀结构和显着的开关性能。在相变过程中，VO 2薄膜的方块电阻在Δ H（14-16 ℃）的小温度范围内急剧减小。由于TiO 2缓冲层对薄膜的微观结构进行了调整，随着TiO 2缓冲层厚度的增加，VO 2薄膜的相变性能增强，相变温度降低。对于100 nm的TiO 2缓冲层样品，最佳的红外太阳能调制能力高达23%。(C)© 2016 Elsevier B. V.版权所有。
TiO2 buffer layers were employed for VO2 thin films growth on glass substrates. The crystallinity, microstructure, optical and electrical properties of the samples were characterized by XRD, SEM, spectrophotometer, and four-probe technique, respectively. Experimental results investigated that the films have high crystal quality with preferential VO2 (011) lattice orientation, dense homogeneity structure, and significant switching performance. In phase transition process, the sheet resistance of VO2 films exhibits sharp reducing within a small temperature range Delta H (14-16 degrees C). The phase transition performance of VO2 films enhanced and transition temperature reduced with TiO2 buffer layer thickness increasing due to the microstructure adjusted by TiO2 buffer layer, According to the optical transmittance spectra of the prepared VO2 films in high and low temperature state, the infrared solar energy modulability was calculated. The optimal infrared solar energy modulation ability is as high as 23% for 100 nm TiO2 buffer layer sample. (C) 2016 Elsevier B.V. All rights reserved.