High quality Al‐doped ZnO thin films deposited using targets prepared by chemical coprecipitation
High quality Al‐doped ZnO thin films deposited using targets prepared by chemical coprecipitation
复制标题
DOI：
10.1002/pssa.200824416
复制
发表时间：
2009-07
期刊：
影响因子：
--
通讯作者：
L. Cai;G. Jiang;C. Zhu;Deliang Wang
中科院分区：
文献类型：
--
作者：
L. Cai;G. Jiang;C. Zhu;Deliang Wang
为了生长高质量的铝掺杂氧化锌薄膜（AZO），采用化学共沉淀法合成了超细AZO粉末，与传统的机械研磨方法相比，Al2O3更容易、更均匀地掺杂在ZnO中。 X射线衍射结果表明，Al原子取代了ZnO晶格中Zn原子的位置，但没有形成Al2O3相。使用脉冲激光沉积在 200 °C 的基板温度下沉积 AZO 薄膜。 AZO薄膜的电阻率为1.7×10-4Ω·cm，可见光区的透光率超过85%。这些薄膜的性能完全满足太阳能电池器件的要求。 （© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
In order to grow high‐quality aluminum‐doped zinc oxide films (AZO), the chemical coprecipitation method was adopted to synthesize ultra‐fine AZO powder, in which Al2O3 was more easily and more uniformly doped in ZnO compared to the traditional mechanical grinding method. X‐ray diffraction results showed that Al atoms have replaced the position of Zn atoms in ZnO lattice without forming the Al2O3 phase. AZO thin films were deposited at a substrate temperature of 200 °C by using pulsed laser deposition. The resistivity of the AZO films was 1.7 × 10‐4 Ω cm and the light transmittance in the visible region exceeded 85%. The properties of these films commendably meet the requirements of solar cell devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)