A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.
A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.
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DOI：
10.1039/c5cc01170a
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发表时间：
2015-06
影响因子：
4.9
通讯作者：
J. Tao;Kezhi Zhang;Chuanjun Zhang;Leilei Chen;Hui-Min Cao;Junfeng Liu;Jinchun Jiang;Lin Sun;P. Yang;J. Chu
中科院分区：
文献类型：
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作者：
J. Tao;Kezhi Zhang;Chuanjun Zhang;Leilei Chen;Hui-Min Cao;Junfeng Liu;Jinchun Jiang;Lin Sun;P. Yang;J. Chu
采用不同沉积时间的Cu-Zn-Sn-S前驱体共电沉积，制备了厚度为0.35 ~ 1.85 μm、晶粒尺寸为0.5 ~ 1.5 μm的Cu2ZnSnS4薄膜。在这里，我们首次引入了用于开发CZTS太阳能电池的溅射CdS缓冲层，使突破效率达到6.6%。
Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.