Broadband ferromagnetic resonance linewidth measurement of magnetic tunnel junction multilayers
Broadband ferromagnetic resonance linewidth measurement of magnetic tunnel junction multilayers
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DOI：
10.1063/1.3054642
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发表时间：
2009-01
影响因子：
4
通讯作者：
J. F. Sierra;F. Aliev;R. Heindl;S. Russek;W. Rippard
中科院分区：
文献类型：
--
作者：
J. F. Sierra;F. Aliev;R. Heindl;S. Russek;W. Rippard
磁隧道结自由层的宽带铁磁共振(FMR)线宽被用作磁结构质量的简单诊断。在自由层反转和钉扎层反转的场区附近，FMR线宽增加，并且这种增加与未图案化薄膜中的磁滞增加、图案化器件中的低频噪声以及先前使用Lorentz显微镜观察到的磁畴波纹有关。磁化后改变了自由层的FMR线宽，表明相当大的磁无序起源于交换偏置的钉扎层，被转移到自由层。
The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low-frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth, indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer.