Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior
Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior
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DOI：
10.1063/1.3068333
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发表时间：
2009-01
影响因子：
3.2
通讯作者：
E. Anton;R. García;T. Key;J. Blendell;K. Bowman
中科院分区：
文献类型：
--
作者：
E. Anton;R. García;T. Key;J. Blendell;K. Bowman
提出了一种预测微结构对块体铁电陶瓷局域极化转换影响的数值方法。该模型表明，由于颗粒之间的空间耦合以及大块陶瓷材料的热机械和机电性能之间的直接物理耦合，铁电材料中会产生内置的电磁场。由热机械诱导的颗粒-颗粒机电相互作用产生的内置场导致了四种微观结构开关机制的出现：(1)简单开关，其中铁电畴的c轴将从每个颗粒的核心开始与所施加的宏观电场的方向对齐；(2)晶界感应开关，其中，由于介电常数和介电常数的强各向异性局部产生的极化和应力，电畴的开关响应将在颗粒的角落和边界处启动。
A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain’s switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and th...