Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
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DOI：
10.1063/1.4999249
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发表时间：
2017-09
影响因子：
4
通讯作者：
Haiding Sun;Young Jae Park;Kuang-Hui Li;C. Castanedo;Abdulmohsen Alowayed;T. Detchprohm;R. Dupuis
中科院分区：
文献类型：
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作者：
Haiding Sun;Young Jae Park;Kuang-Hui Li;C. Castanedo;Abdulmohsen Alowayed;T. Detchprohm;R. Dupuis
由于BUN和AlGaN合金具有较大的禁带宽度，它们的异质结具有在深紫外光和电力电子器件中应用的潜力。然而，这种结的带状排列还没有确定。在本工作中，我们研究了金属有机气相外延生长的B0.14Al0.86N/Al0.7Ga0.3N异质结的带隙参数。选择这些特定的组合物是为了确保在深紫外光和电力电子应用中有足够大的频带偏移。高分辨电子显微镜证实了异质结具有高质量的结构，界面陡峭，元素分布均匀。利用高分辨X射线光电子能谱测量了B1S和Ga2p3/2的核能级结合能相对于B0.14Al0.86N和Al0.7Ga0.3N层的价带极大值。然后，我们测量了异质结界面处B1S和Ga2p3/2核能级之间的能量分离。
Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a B0.14Al0.86 N/Al0.7Ga0.3N heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p3/2 with respect to the valence band maximum of B0.14Al0.86N and Al0.7Ga0.3N layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p3/2 core levels at the interface of the hetero...