Electrical and optical studies of ZnO:Ga thin films fabricated via the sol-gel technique
Electrical and optical studies of ZnO:Ga thin films fabricated via the sol-gel technique
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DOI：
10.1016/s0040-6090(02)00286-9
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发表时间：
2002-05-01
期刊：
影响因子：
2.1
通讯作者：
Ramanan, SR
中科院分区：
文献类型：
--
作者：
Cheong, KY;Muti, N;Ramanan, SR
研究了Ga掺杂浓度、热处理温度和不同热处理环境对ZnO薄膜形貌、电学和光学性能的影响。采用溶胶-凝胶浸渍-提拉法，以非醇盐醋酸锌为原料，通过醇类溶剂制备了Ga掺杂的ZnO薄膜。Ga作为掺杂剂的引入可以减小微晶尺寸，这归因于成核中心数量的增加。晶粒生长也观察到在高后热处理温度。发现不同的后热处理环境（空气或还原气氛）不会改变组织的取向、显微组织的形状和尺寸。发现在还原性气氛（4%H-2-96%N-2）中使用后热处理可以将方块电阻R降低一个数量级。(C)2002 Elsevier Science B. V.保留所有权利。
The effects of dopant (Ga) concentration, post-heat treatment temperatures, and different heat treatment environments on the morphology, electrical and optical properties of ZnO films were studied. ZnO films doped with Ga are derived from non-alkoxide zinc acetate via the alcoholic route by a sol-gel dip-coating technique. Introduction of Ga, as a dopant, can reduce crystallite size, which is attributed to the increased number of nucleation centers. Grain growth was also observed at high post-heat treatment temperature. It was discovered that different post-heat treatment environments (air or reduced atmosphere) did not change the structure orientation, microstructure shapes and size. It was found that the sheet resistance, R, could be reduced by an order of magnitude, using post-heat treatment in reduced atmosphere (4%H-2-96%N-2). (C) 2002 Elsevier Science B.V. All rights reserved.