Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess
Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess
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毫米波%20AlGaN/GaN%20HEMT%20With%2043.6%%20功率附加效率%20at%2040%20GHz%20Fabriated%20by%20Atomic%20Layer%20Etching%20Gate%20Recess
DOI：
10.1109/led.2020.2984663
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发表时间：
2020-05-01
影响因子：
4.9
通讯作者：
Liu, Xinyu
中科院分区：
文献类型：
--
作者：
Zhang, Yichuan;Huang, Sen;Liu, Xinyu
为制备毫米波AlGaN/GaN高电子迁移率晶体管（HEMTs），研制了低损伤原子层刻蚀（ALE）栅极凹槽。等离子体离子诱导的对AlGaN屏障的轰击被ALE隐窝有效抑制，有助于形成良好控制的凹陷表面形态。抑制了对AlGaN/GaN异质结构的晶格损伤也反映在显著减少的栅极泄漏以及与损伤诱导陷阱相关的不可见阈值电压位移上。采用0.15-<inline-formula> < text -math符号="LaTeX">$\mu \text{m}$ </ text -math></inline-formula> t栅极制造技术，实现了205 GHz的高增益截止频率<inline-formula> < text -math符号="LaTeX">${f}_{\text {MAX}}$ </ text -math></inline-formula>。ale嵌入式AlGaN/GaN hemt在40 GHz连续波模式下显示出创纪录的高功率附加效率（PAE），达到43.6%。与采用传统栅极凹槽工艺的可控hemt相比，相关增益和输出功率密度也有显著提高。
Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the AlGaN barrier is effectively suppressed by the ALE recess, contributing to a well-controlled recessed surface morphology. The suppressed lattice damage to AlGaN/GaN heterostructure is also reflected by a significantly reduced gate leakage as well as an invisible threshold voltage shift associated with damage induced traps. With a 0.15-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> T-gate fabrication technology, a high power-gain cutoff frequency <inline-formula> <tex-math notation="LaTeX">${f}_{\text {MAX}}$ </tex-math></inline-formula> of 205 GHz has been achieved. The ALE-recessed AlGaN/GaN HEMTs exhibits a record high power-added-efficiency (PAE) of 43.6% at 40 GHz in a continuous-wave mode. The associated gain and output power density are also remarkably improved compared with controlled HEMTs with conventional gate recess process.