2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)
2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)
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DOI：
10.1109/16.544421
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发表时间：
1996-12
影响因子：
3.1
通讯作者：
Y. Takahashi;T. Koga;H. Kirihata;Y. Seki
中科院分区：
文献类型：
--
作者：
Y. Takahashi;T. Koga;H. Kirihata;Y. Seki
研制了一种2.5kV-100A扁平封装IGBT（微堆IGBT）。这是第一个工作，以证明高电压，高电流，高可靠性的扁平封装MOS控制器件的可能性。该20-mm正方形芯片与具有四个矩形p-基极区的发射极压接触，在该四个矩形p-基极区上没有布置MOS栅极。这种结构的最大优点是双面冷却和发射极无引线键合。微堆叠IGBT显示出2.5 kV的高阻断电压，在集电极电流I/sub c/= 100 A时3.5 V的典型导通状态电压，8/spl倍/I/sub c/的关断能力，以及在2至8 kN/芯片范围内的电和热特性的良好压力接触。
A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the emitter wire bondingless. The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current I/sub c/=100 A, the turn-off capability of 8/spl times/I/sub c/, and the good pressure contact for the electrical and thermal characteristics in the range from 2 to 8 kN/chip.