Room-temperature ferromagnetism in Si–SiO2 composite film on glass substrate
Room-temperature ferromagnetism in Si–SiO2 composite film on glass substrate
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DOI：
10.1016/j.jallcom.2010.04.226
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发表时间：
2010-07
影响因子：
6.2
通讯作者：
C. Zhen;Yuanbo Liu;Yongjun Zhang;Li Ma;C. Pan;D. Hou
中科院分区：
文献类型：
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作者：
C. Zhen;Yuanbo Liu;Yongjun Zhang;Li Ma;C. Pan;D. Hou
在玻璃衬底上生长的Si-SiO_2非晶薄膜中观察到了室温铁磁性。当Si体积分数为16vol%时，Si-SiO_2薄膜的磁矩最大。Si含量也影响薄膜的磁序，在我们的薄膜中检测到不同的畴。在O2和Ar气氛中进行热退火的情况下，M（H）曲线的微妙差异表明，所观察到的铁磁性并不主要源于氧缺陷。得出的结论是，铁磁性的产生是由于缺陷之间的直接耦合。这些缺陷来自于Si颗粒与SiO2基体之间的界面。通过调整薄膜中的Si含量，可以改变缺陷密度，从而控制铁磁耦合的强度。
Room-temperature ferromagnetism (FM) has been observed in Si–SiO2amorphous films grown on glass substrates. The magnetic moment was largest in the case of the Si–SiO2thin film with a Si volume percentage of 16vol%. The Si content also impacts the magnetic order of the film, and distinct domains were detected in our films. The delicate difference in the M (H) curve between the cases where thermal annealing was carried out in O2and Ar atmosphere indicates that the observed ferromagnetism does not originate primarily with oxygen defects. It was concluded that the ferromagnetism arose due to direct coupling between defects. These defects come from the interface between the Si particles and the SiO2matrix. By tuning the Si content in the thin films, one can change the defect density and thereby control the strength of the ferromagnetic coupling.