Large-scale pattern growth of graphene films for stretchable transparent electrodes.
Large-scale pattern growth of graphene films for stretchable transparent electrodes.
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DOI：
10.1038/nature07719
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发表时间：
2009-02-05
期刊：
影响因子：
64.8
通讯作者：
Hong, Byung Hee
中科院分区：
文献类型：
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作者：
Kim, Keun Soo;Zhao, Yue;Hong, Byung Hee
与石墨烯的大规模图案生长相关的问题构成了在器件应用中使用这种材料的主要障碍之一。最近，宏观尺度的石墨烯薄膜是通过二维组装化学衍生自石墨晶体和氧化石墨烯的石墨烯片来制备的。然而，发现这些膜的薄层电阻比理论预期值大得多。在这里，我们报告了使用化学气相沉积在薄镍层上直接合成大规模石墨烯膜，并提出了两种不同的方法图案化的膜，并将其转移到任意基板。转移的石墨烯薄膜显示出非常低的薄层电阻，约为280 Ω/平方，光学透明度约为80%。在低温下，转移到二氧化硅衬底上的单层显示出大于3，700 cm（2）V（-1）s（-1）的电子迁移率，并表现出半整数量子霍尔效应，这意味着通过化学气相沉积生长的石墨烯的质量与机械切割的石墨烯一样高。利用石墨烯出色的机械性能，我们还展示了这些高导电和透明电极在柔性，可拉伸，可折叠电子产品中的宏观用途。
Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers, and present two different methods of patterning the films and transferring them to arbitrary substrates. The transferred graphene films show very low sheet resistance of approximately 280 Omega per square, with approximately 80 per cent optical transparency. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700 cm(2) V(-1) s(-1) and exhibit the half-integer quantum Hall effect, implying that the quality of graphene grown by chemical vapour deposition is as high as mechanically cleaved graphene. Employing the outstanding mechanical properties of graphene, we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics.